Developed a second-generation SiC (Silicon Carbide) MOSFET with a withstand voltage of up to 1200V for inverters and converters for industrial equipment and solar power regulators, a well-known Japanese semiconductor manufacturer, ROHM (headquartered in Kyoto, Japan) "SCH2080KE". This product has low loss and high reliability, which is very helpful for lower power consumption and miniaturization in various applications.
This product is the first in the world ※ Successfully realized the integrated package of SiC-SBD and SiC-MOSFET. The internal diode's forward voltage (VF) is reduced by more than 70%, achieving lower losses while reducing the number of components.
The production base is in ROHM Apollo Co., Ltd. (Fukuoka Prefecture, Japan). Samples will be sold from June and production will begin in July.
Now, Si-IGBTs are generally used in inverters and converters of the 1200V class, but the power conversion loss caused by the recovery of the tail current and the external FRD is large, so the lower loss, high frequency action SiC-MOSFET The development is highly anticipated. However, conventional SiC-MOSFETs have many problems in terms of reliability degradation (on-resistance and forward voltage rise/resistance deterioration) and gate oxide film failure due to energization of the body diode, and it has not been possible to achieve true full introduction before.
This time, ROHM successfully solved all the problems of reliability including body diodes by improving the process and component structure of crystal defects. Moreover, compared with the conventional product, the on-resistance per unit area is reduced by about 30%, and the chip size is miniaturized.
In addition, through the original mounting technology, the SiC-SBD, which is traditionally required to be externally packaged, has been successfully packaged, making it possible for the body diode of SiC-MOSFET to have a long-term problem of reducing the forward voltage.
As a result, the loss during operation is reduced by more than 70% compared to the Si-IGBT used in a general inverter, and lower loss is achieved, and a higher frequency of 50 kHz or more is achieved, and it is helpful. Miniaturization of peripheral components.
In addition, the model SiC-MOSFET "SCT2080KE", which is not in the same package as SiC-SBD, has been developed to provide products that meet different circuit configurations and customer requirements. The two products will be held at the Shanghai World Expo Exhibition Hall from June 19th (Tuesday) to 21st (Thursday) at the "SMM Asia 2012" professional exhibition of the latest technology gathering of power electronics, smart sports and power features. The booth was exhibited. Welcome to visit the site.
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