Toshiba’s first move is to introduce new component structures to create high-performance products. For example, in the case of high-voltage MOSFETs, Toshiba will use the super-junction technology of single epi- episodes to reduce the leakage current and achieve higher power efficiency. In order to meet the demand for high-frequency components, power semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are being developed.
Kobayashi stated that Toshiba’s strategy is to maximize the production efficiency with the minimum amount of equipment investment. Therefore, it decided to dispatch the 8-inch wafer production line manufacturing facilities in the Yokkaichi factory to the Kaga factory for use in the production of power semiconductors. After the equipment is redistributed, 8 wafers will reach 80% of total power semiconductor output by 2013. On the other hand, the Kaga factory production line will be expected to reach full capacity before 2012, and Toshiba will decide whether or not to build a new plant.
Regarding other specific countermeasures to reduce costs, Toshiba said that due to the high cost of package semiconductors for power semiconductors, which accounts for 40% of the total production process costs, increasing the proportion of outsourced OEMs will be the basic guideline. The outsourcing ratio in 2012 is expected to be 80. %, it will reach 90% by 2013.
In addition, Toshiba will relocate its Oita factory, which originally manufactured system-on-chip (SoC) chips, to CMOS. In particular, Backside Illuminated (BSI) CMOS light-sensing devices designed for tablet PCs and smart phones have characteristics of high sensitivity and high speed, and will become the main product of the Oita Factory in the future.
Toshiba also intends to thin the system for low-cost systems large-scale integrated circuits (LSI), Toshiba in 2010 to 50% output to Samsung Electronics (Samsung Electronics), this ratio is expected to expand to 80% in 2013.
The Schottky Diode is another type of semiconductor diode which can be used in a variety of wave shaping, switching and rectification applications the same as any other junction diode. The main adavantage is that the forward voltage drop of a Schottky Diode is substantially less than the 0.7 volts of the conventional silicon pn-junction diode.
Schottky diodes have many useful applications from rectification, signal conditioning and switching, through to TTL and CMOS logic gates due mainly to their low power and fast switching speeds.
the Schottky Diode also known as a Schottky Barrier Diode is a solid-state semiconductor diode in which a metal electrode and an n-type semiconductor form the diodes ms-junction giving it two major advantages over traditional pn-junction diodes, a faster switching speed, and a low forward bias voltage.
The metal–to-semiconductor or ms-junction provides a much lower knee voltage of typically 0.3 to 0.4 volts compared against a value of 0.6 to 0.9 volts seen in a standard silicon base pn-junction diode for the same value of forward current.
Variations in the metal and semiconductor materials used for their construction means that silicon carbide (SiC) Schottky diodes are able to turn [ON" with with a forward voltage drop as little as 0.2 volts with the Schottky diode replacing the less used germanium diode in many applications requiring a low knee voltage.
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